International Conference Papers – نانو شرق ابزار توس
بیست اسکریپت قالب وردپرس آموزش وردپرس قالب فروشگاهی وردپرس اسکریپت

International Conference Papers

Si3N4 Nanotip Array Synthesis via Silicon Substrate Treatment, M.A. Gharavi, H. Haratizadehi; 6th International Conference on Surfaces, Coatings and Nanostructured Materials (NANOSMAT), 17-20 October 2011, Krakow, Poland.

 

A Complete Study on the AlN Nanostructure Formation Mechanism, M.A. Gharavi, H. Haratizadeh, A. Kitai; 6th International Conference on Surfaces, Coatings and Nanostructured Materials (NANOSMAT), 17-20 October 2011, Krakow, Poland.

 

AlN Nanostructural Evolution & Morphlogy: Nanoparticles, Nanocages & Nanotips, M.A. Gharavi, H. Haratizadeh, A. Kitai; Advances in Applied Physics and Materials Science Congress, APMAS 2011, 12-15 May 2011, Antalya, Turkey.

 

Tin Oxide 1D Nanostructure Synthesis For Gas Sensing Application, M. Barzegar, H. Mousavi, H. Haratizadeh, M.B. Rahmani; Advances in Applied Physics and Materials Science Congress, APMAS 2011, 12-15 May 2011, Antalya, Turkey.

 

Aluminium nitride nano-particles synthesised by using tube furnace, S.H. Mousavi, H. Haratizadeh, E. Abdoli; 2010 Villa Conference on Interaction Among Nanostructures, Satorini, Greece, 2010.

 

Chemical Synthesis and Optical Properties of AlN Nano-Structures, S.H. Mousavi, H. Haratizadeh;  E-MRS, Spring Meeting, 7-11 June 2010, Strasbourg, France, 2010.

 

Synthesis and optical investigation of wurtzite Zinc-Oxide nanorods,  S.H. Mousavi, H. Haratizadeh; Nanotechnology for Sustainable Energy, 7-9 July 2010, Universitätszentrum Obergurgl, Obergurgl, Austria, 2010.

 

Structural and Optical Investigation of Aluminum Nitride Nanotips Synthesized by Electrical Furnace, H. Haratizadeh; S.H. Mousavi, A. Kitai, ISGN3 (Growth of III-Nitrides), 4-7 July 2010, Montpellier, France, 2010.

 

Synthesis and gas sensing properties of Zinc Oxide nanostructures, H. Minaee, S.H. Mousavi, H. Haratizadeh;  NANOSENS, 2-3 December 2010, Vienna, Austria.

 

Structural and Optical Investigation of Aluminum Nitride Nanotips Synthesized by Electrical Furnace, H. Haratizadeh, S.H. Mousavi, A. Kitai; The 3rd International Symposium on Growth of III-nitride (IGNS3), July 4-8, Montpellier, France (2010).

 

Growth and luminescence properties of ZnO nanostructures, H. Haratizadeh, S.H. Mousavi; accepted on the 4th MPA Meeting (International Meeting on Developments in Materials, Processes and Applications of Emerging Technologies), 28-30 July, Braga, Portugal (2010).

 

Optical emission enhancement of InGaNAs nanostructures by rapid thermal annealing processes. H. Haratizadeh, R. Amiri, E. Abdoliu and K. Baskar; The 1st international conference on NanoManufacturing (NanoMan 2008), 13-16 July, Singapore (2008).

 

Linear shift of the optical emission of InGaNAs quantum well nanostructure, E. Abdoli, H. Haratizadeh, P.O. Holtz; Condensed Matter Physics Conference of Balkan Countries, 26-28 May 2008, Mügla University, Mügla, Turkey (2008).

 

Optical properties of InGaNAs/GaAs single quantum well, Hamid Haratizadeh, Maryam Gholami, Per Olof Holtz, Mattias Hammar, Carl Asplund; Proc. of International Conference on Nanotechnology in industrial Applications, EuroNanoForum 2007, Düsseldorf, Germany (2007).

 

Effect of Thermal Annealing Processes on Optical Properties of InGaNAs Nanostructures, Hamid Haratizadeh, Roohollah Amiri, Per Olof Holtz, Mattias Hammar, Carl Asplund; Proc. of International Conference on Nanoscience and Nanotechnology, China 2007, June 4-6, Beijing, China (2007).

 

Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells. B. Arnaudov, P. P. Paskov, H. Haratizadeh, P. O. Holtz, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki; Physica Status Solidi C, 3, pp. 1888 (2006).

 

Optical investigation of the well width fluctuations in MOCVD-grown GaN/Al0.07Ga0.93N multiple quantum wells. H. Haratizadeh, B. Monemar , P. P. Paskov, P. O. Holtz, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki; Proc. of International Workshop on Nitride Semiconductors (IWN2006), October 22-27, pp. 337, Kyoto, Japan (2006).

 

Photoluminescence evalution of electron concentration in highly modulation doped GaN/AlGaN multiple quantum wells. Proc. of International Workshop on Nitride Semiconductors (IWN2006), October 22-27, Kyoto, Japan (2006).

 

Optical Studies of Wide Band Gap III-Nitride Semiconductor Quantum Wells and Superlattices. Hamid Haratizadeh, Bo Monemar, Plamen P. Paskov, Per Olof Holtz, Peder Bergman, H. Amano, Isamu Akasaki ; Proc. of European Materials Research Society (E-MRS) fall meeting 2006, 4th – 8th September, Warsaw, Poland (2006).

 

The magnetic field effect on the recombination of exciton in GaN/AlGaN MQW. E. Abdoli, H. Haratizadeh, P.O. Holtz; 17th International Conference on High Magnetic Fields in Semiconductor Physics (HMF), 30th July-4th August, Würzburg, Germany (2006).

 

The observation of discrete well width fluctuations via localized excitons in MOCVD-grown GaN/AlGaN multiple quantum wells. H. Haratizadeh, B. Monemar, P.P. Paskov; Proc. of European Materials Research Society (E-MRS) Spring Meeting (E-MRS – IUMRS – ICEM 06), May 29 to June 2, Nice ,France (2006).

 

Magneto-luminescence of the modulation Si dopped GaN/AlGaN multiple quantum wells. H. Alaei, E. Abdoli, H. Haratizadeh; Proc. of UK Compound Semiconductors Conference, Institute of Physics (IOP), The University of Sheffield; 5th – 6th July, pp. F-P-2; Sheffield, UK, (2006).

 

The well width variations in GaN/AlGaN MQWs by two GaN monolayers. H. Haratizadeh, B. Monemar P. P. Paskov, H. Amano; Proc. of the 6th International Conference of Nitride Semiconductors, August 28 -September 2, Bremen, Germany, (2005).

 

Dynamical study of the radiative recombination processes in GaN/AlGaN QWs. M. Sabooni, M. Esmaeili, F. Tabasi, H. Haratizadeh, B. Monemar, H. Amano; Proc. of the 6th International Conference of Nitride Semiconductors, August 28 – September 2, Bremen, Germany, (2005).

 

Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures. B. Monemar, P. P. Paskov, H. Haratizadeh, G. Pozina, J. Bergman, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki, Inter. Conf. on the Nanostructures, Physics and Technology 10, Nano 2002; June 17-21, 2002; Proc. SPIE Int. Soc. Opt. Eng., Vol. 5023 , pp. 63-67; St Petersburg, Russia, (2003).

 

Electronic properties of n-type AlxGa1-xAs alloys. A. Ferreira da Silva, I. Pepe, H. Haratizadeh, P.O. Holtz, C. Persson, R. Ahuja, J. Souza de Almeida, A.G. de Oliveira; Mat. Res. Soc. Symp. Proc., Vol. 744, pp. M8.101-M8.106, Boston, USA, (2003).

 

Photoluminescence study of Si doped GaN/AlGaN multi quantum wells. H. Haratizadeh, P. P. Paskov, G. Pozina, P. O. Holtz, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki; Proc. of the ICPS 2002; UK; July 29 – August 2, 2002; IOP Conf. Series 171, paper D-109; Edinburgh, Scotland, (2002).

 

The influence of Si-donor doping on the exciton localization in modulation- doped GaN/AlGaN multi quantum wells. H. Haratizadeh, P. P. Paskov, G. Pozina, P. O. Holtz, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki; Proc. of the 14th Inter. Conf. on Indium Phosphide and Related Materials Conference (IPRM 2002); May 12-16, 2002; p. 495; Stockholm, Sweden, (2002).

 

Photoluminescence study of Si doped GaN/AlGaN multi quantum wells. H. Haratizadeh, P. P. Paskov, G. Pozina, P. O. Holtz, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki; Proc. of the Inter. Conf. on NANO-7 & ECOSS-21; June 24 – 28, MO.P.013; Malmö, Sweden, (2002).