ISI Journal Papers – نانو شرق ابزار توس
بیست اسکریپت قالب وردپرس آموزش وردپرس قالب فروشگاهی وردپرس اسکریپت

ISI Journal Papers

Comparison of structural and photoluminescence properties of zinc oxide nanowires grown by vapor–solid and zapor–liquid–solid methods, H. Mousavi, H. Haratizadeh, H. Minaee; Thin Solid Films,  2011.

 

One Dimensional Aluminum Nitride Nanostructures: Synthesis, Structural, and Luminescence Properties, H. Mousavi, M. A. Gharavi, H. Haratizadeh, A. Kitai, and P. W. de Oliveira; Journal of Nanoscience and Nanotechnology, 11, 8284-8288, (2011).

 

Investigation of Substrate Influence on Tin Dioxide Nanostructures Synthesized Using Horizontal Furnace, H. Mousavi, H. Haratizadeh, P. W. de Oliveira; Journal of Nanoscience and Nanotechnology, 11, 8233-8236, (2011).

 

Formation and characterization of zinc oxide nanowires grown on hexagonal-prism microstructures, H. Mousavi, H. Haratizadeh, and A. Kitai; Materials Letters, 65, – PP 2470-2472, (2011).

 

The effect of morphology and doping on photoluminescence of ZnO nanostructures, H. Mousavi, H. Haratizadeh, and H. Minaee; Optics Communications, 284, 3558-3561 (2011).

 

Media temperature effect on optical properties of ZnO nanoparticles colloidal concentration, Koushki, M.H. Majles Ara, S.H. Mousavi, and H. Haratizadeh; Current Applied Physics, 2011 (In Press).

 

Laser beam shape and curvature radius of the laser wavefront passing through ZnO nanostructures, S.H. Mousavi, E. Koushki, Haratizadeh; Physica E: Low-dimensional Systems and Nanostructures, 2010 (In Press).

 

Nonlinear optical investigation of Gaussian laser beam propagating in a dye-doped nematic liquid crystal, H. Mousavi, E. Koushki, H. Haratizadeh; Journal of Molecular Liquids, 153, pp. 124-128, (2010).

 

Investigation of the localization effect in InGaNAs/GaAs SQWs using the LSE model, Esmaeil Abdoli, Hamid Haratizadeh, Physica Status Solidi B, 247, 1, pp 170–175, (2010).

 

Investigation of optical properties of modulation doped GaN/AlGaN MQW nanostructures, Esmaeili, H. Haratizadeh, M. Gholami, Physica B, 404, pp. 4233-4236, (2009).

 

Linear shift of the optical emission of InGaAsN quantum well nanostructure in the magnetic field, Esmaeil Abdoli, and Hamid Haratizadeh, P.O. Holtz, Journal of Optoelectronics and Advanced Materials – Symposia, 1, No. 3, pp. 250-253, (2009).

 

Evaluation of optical quality and properties of Ga64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy, M. Gholami, M. Esmaeili, H. Haratizadeh, P.O. Holtz, and M. Hammar; OPTO−ELECTRONICS REVIEW, 17, No. 3, pages: 260-264, (2009).

 

Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields, Esmaeili, M. Gholami, H. Haratizadeh, B. Monemar, P.O. Holtz, S. Kamiyama, H. Amano, and I. Akasaki; OPTO−ELECTRONICS REVIEW, 17, No. 4, pp. 293-299 (2009).

 

Effect of the extrinsic and temporal carriers on radiative recombination of III-nitride nanostructures, Esmaeili H. Haratizadeh, M. Gholami, B. Monemar; Iranian Journal of Science & Technology, Transaction A, 32 ,No. 3, pp. 207-213, (2008).

 

Alternation of band gap and localization of excitons in InGaNAs nanostructures with low nitrogen content. Gholami, H. Haratizadeh, M. Esmaeili, R. Amiri, P.O. Holtz and M Hammar; Nanotechnology, 19, pp. 315705 (2008).

 

Dynamical study of the radiative recombination processes in GaN/AlGaN QWs. Mahmood Sabooni, Morteza Esmaeili, Hamid Haratizadeh, Bo Monemar, Hiroshi Amano; Mater Sci: Mater Electron, S316–S318, (2008).

 

Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells. Haratizadeh, B. Monemar , P. P. Paskov, P. O. Holtz, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki; Physica Status Solidi B, 244, pp. 1727-1734 (2007).

 

Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiple quantum wells with graded interfaces, Valcheva, S. Dimitrov, B. Monemar, H. Haratizadeh, P.O.A. Persson, H. Amano and I. Akasaki; Acta, Physica Polonica A, 112, pp. 395 (2007).

 

Optical properties of GaN/AlGaN QW nanostructures with different well and barrier widths. Esmaeili, M. Sabooni, H. Haratizadeh, P.P. Paskov, B. Monemar , P.O. Holtz, S. Kamiyama, M. Iwayai; J. Phys.: Condens. Matter 19 356218 (10pp), (2007).

 

Exciton localization behavior in different well width undoped GaN/AlGaN nanostructures, Sabooni, M. Esmaeili, H. Haratizadeh, B. Monemar , P. P. Paskov, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki; Opto-Electron. Rev., 15, pp. 163-167 (2007).

 

Optical investigation of the well width fluctuations in MOCVD-grown GaN/Al07Ga0.93N multiple quantum wells. H. Haratizadeh, B. Monemar , P. P. Paskov, P. O. Holtz, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki; Physica Status Solidi B, 244, pp. 1727-1734 (2007).

 

Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: Influence of Al composition and Si doping. Esmaeili; H. Haratizadeh; B. Monemar; P.P. Paskov; P.O. Holtz; P. Bergman; M. Iwaya; S. Kamiyama; H. Amano and I. Akasaki; Nanotechnology, 18, pp. 025401 (2007).

 

Effects of Si doping position on the Emission Energy and Recombination Dynamics of GaN/AlGaN MQWs. Haratizadeh, B. Monemar, and H. Amano; Physica Status Solidi A, 203, pp. 149-153 (2006).

 

Photoluminescence study of Si-doped GaN/Al07Ga0.93N multiple quantum wells with different dopant position. H. Haratizadeh, B. Monemar, P. P. Paskov, J. P. Bergman, B. E. Sernelius, P. O. Holtz, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki; Applied Physics Letters, 84, pp. 5071 (2004).

 

Optical investigation of AlGaN/GaN quantum wells and superlattices. Monemar, P. P. Paskov, H. Haratizadeh, J. P. Bergman, E. Valcheva, V. Darakchieva, B. Arnaudov, T. Paskova, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki; Phys. Status Solidi A, 201, pp. 2251 (2004).

 

Time resolved photoluminescence study of Si modulation deped GaN/ Al07Ga0.93N multiple quantum wells. H. Haratizadeh, B. Monemar, P. P. Paskov, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki; Physica Status Solidi B, 241, pp. 1124 (2004).

 

Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum wells. Monemar, H. Haratizadeh, P. P. Paskov, G. Pozina, P. O. Holtz, J. P. Bergman, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki; Phys. Status Solidi B, 237, pp. 353 (2003).

 

Photoluminescence of n-doped InGaN/GaN and AlGaN/GaN Multiple Quantum Well structures, role of depletion fields and polarization fields. Monemar, P. P. Paskov, H. Haratizadeh, P. O. Holtz, J. P. Bergman, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki; Inter. Conf. on Physics of Light Matter Coupling in Nitrides; Crete, Greece; May 25 – 29, 2002; Phys. Status Solidi A, 195, pp. 523 (2003).

 

Effect of n-type modulation-doping on the photoluminescence of GaN/AlGaN multi quantum wells. Haratizadeh, P. P. Paskov, G. Pozina, P. O. Holtz, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki; Appl. Phys. Lett. 80, pp. 1373 (2002).